- 40 ab s olut e maximum r at ing s (t a =25 c unles s otherwis e noted) p arameter s ymbol limit unit drain-s ource voltage v ds v g ate-s ource voltage v g s 20 v drain c urrent-c ontinuous @ t j =25 c -p uls ed i d - 14 -1.25 1.25 aa a w i dm drain-s ource diode f orward c urrent i s maximum p ower dis s ipation p d operating j unction and s torage temperature r ange t j , t s t g -55 to 150 c t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 100 /w c a a b 1 t. 12,2007 s amhop microelectronics c orp. s ot -23 p ackage. p r oduc t s ummar y v ds s i d r ds (on) ( m ) max -3.5a 65 @ v g s = -10v 85 @ v g s = -4.5v f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. -40v s t s 4501 g d s s ot-23 s g d p -c hannel e nhancement mode f ield e ffect t rans is tor o c -3.5
s t s 4501 e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = 5 2 p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d -250ua = -40 v zero g ate voltage drain c urrent i ds s v ds -32v, v g s 0v = = -1 g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 100 na on c har ac t e r is t ic s a g ate t hres hold voltage v g s (th) v ds v g s , i d = -250ua = v drain-s ource on-s tate r es is tance r ds (on) v g s -10v, i d -3.5a v g s -4.5v, i d -2a 85 on-s tate drain c urrent i d(on) v ds = -5v, v g s = -10v a s f orward trans conductance f s g v ds -10v, i d -3.5a dy namic c har ac t e r is t ic s b input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =-25v, v g s = 0v f =1.0mh z p f p f p f c == = = = = 65 ua m ohm m ohm -20 60 100 660 8.7 s wit c hing c har ac t e r is t ic s b turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = -20v i d = -1a v g s = -10v r g e n = 3.3 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =-28v, i d = -3.5 a v g s =-10v nc nc nc f all t ime nc 13 22 72 11 10.5 3.8 1.4 6.5 -1 -1.6 -3 54 70 v ds =-28v, i d =-3.5a,v g s =-10v v ds =-28v, i d =-3.5a,v g s =-4.5v
p arameter s ymbol c ondition min typ max unit e l e c t r ic al c har ac t e r is t ic s (t a =25 c unles s otherwis e noted) dr ain-s o ur c e dio de c har ac t e r is t ic s diode f orward voltage v s d v g s = 0v, is = -1.25 a v b notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p uls e width 300us , duty c ycle 2%. 3 s t s 4501 a.s urface mounted on f r 4 b oard, t 10s ec. -0.75 -1.2 f igure 2. trans fer c haracteris tics f igure 4. on-r es is tance variation with drain c urrent and temperature -i d , drain c urrent (a) -v g s , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-r es is tance -i d , drain c urrent (a) r ds (on) , normalized 120 100 80 60 40 20 0 15 96 3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 t j( c ) 150 100 125 v g s =-4.5v i d =-2a t j, j unction t emperature ( c ) f igure 1. output c haracteris tics -v ds , drain-to-s ource voltage (v ) -i d , drain c urrent(a) 15 12 96 3 0 0 0.5 1 1.5 2 2.5 3 v g s =-3v v g s =-4v v g s =-4.5v t j=125 c f igure 3. on-r es is tance vs . drain c urrent and g ate v oltage 3 6 9 12 15 1 v g s =-10v v g s =-4.5v v g s =-10v i d =-3.5a v g s =-10v 12 v g s =-2.5v v g s =-3.5v -55 c 25 c
f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage -is , s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent -v s d , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 8 6 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua -v g s , g ate- s ource voltage (v ) r ds (on) ( m ) 150 125 100 75 50 25 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 2 4 6 8 10 0 f igure 5. g ate t hres hold v ariation with t emperature 25 c 125 c 75 c 25 c 75 c 125 c i d =-3.5a s t s 4501
5 s t s 4501 0.01 0. 1 1 10 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 square wave puls e d uration(sec) normalized therma l t ransient impedanc e c urve norm aliz ed transien t therma l r esis tanc e single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 -v gs , gate to source voltage (v) qg, total gate charge (nc) 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =-28v i d =-3.5a figure 10. capacitance -v ds , drain-to source voltage (v) c, capacitance (pf) 0 5 10 15 20 25 30 900750 600 450 300 150 0 ciss coss crss figure 12.switching characteristics rg, gate resistance ( ) switching time (ns) 100 10 1 1 6 10 60 100 60 600 300 400 td(on) td(off ) tr tf vds=-20v,id=-1a vgs=-10v figure 13. maximum safe operating area -v ds , drain-source voltage (v) -i d , drain c urrent (a) 20 10 1 0.1 0.03 0.1 1 10 30 50 r d s (o n) l i mi t v g s =-10v s ingle p uls e t c=25 c 1 0 ms 100 ms 1 s dc
j 3 / 8 1 3 / 5 1 2 / 5 1 1 / 4 6 1 1 / 5 6 2 / : 1 ! s f g / 2 / 1 1 1 / 2 1 4 / 2 1 3 / 9 1 2 / 7 1 1 / 6 1 1 / 2 1 1 / 6 6 2 / 4 1 1 / 3 1 1 / 2 1 7 1 / 1 : 5 1 / 1 6 6 1 / 1 2 5 1 1 / 1 2 9 1 / 1 4 : 1 / 1 1 5 1 / 2 3 3 1 / 2 2 1 1 / 1 7 4 1 / 1 3 1 1 / 1 1 5 1 / 1 3 3 1 / 1 6 2 1 / 1 1 9 1 / 5 1 1 / 5 6 2 / 2 6 1 / 1 2 7 1 / 1 4 4 1 / 1 5 6 s t s 4501 6 g a f c b l d (typ.) e h m i f g i j l m 1 / 1 8 6 ! s f g / . . 1 2 1 1 2 1
sot-23 tape and reel data sot-23 carrier tape sot-23 reel s t s 4501 7 3.20 2 0.10 3.00 2 0.10 1.33 2 0.10 1.00 +0.25 1.50 +0.10 8.00 +0.30-0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.20 2 0.02 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot-23 a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t t r feed direction
|
